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Records 64,903

Page 129/2164

Part Number	Description	In Stock
JAN2N2857 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 500MHZ TO72 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	In Stock190 More on Order
JAN2N2857UB Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 0.04A UB Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock349 More on Order
JAN2N4957 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA TO72 Manufacturer: Microsemi Corporation Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	In Stock495 More on Order
JAN2N4957UB Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA UB Manufacturer: Microsemi Corporation Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock207 More on Order
JANS2N2857UB-LC Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V UB Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock356 More on Order
JANTX2N2857 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 500MHZ TO72 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	In Stock454 More on Order
JANTX2N2857UB Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 0.04A UB Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock288 More on Order
JANTX2N4957 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA TO72 Manufacturer: Microsemi Corporation Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	In Stock116 More on Order
JANTX2N4957UB Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA UB Manufacturer: Microsemi Corporation Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock185 More on Order
JANTXV2N2857 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 500MHZ TO72 Manufacturer: Microsemi Corporation Series: Military, MIL-PRF-19500/343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Frequency - Transition: 500MHz Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 12.5dB ~ 21dB @ 450MHz Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	In Stock368 More on Order
JANTXV2N2857UB Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 15V 0.04A UB Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 15V Noise Figure (dB Typ @ f): 4.5dB @ 450MHz Gain: 21dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V Current - Collector (Ic) (Max): 40mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock103 More on Order
JANTXV2N4957 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA TO72 Manufacturer: Microsemi Corporation Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-72-3 Metal Can Supplier Device Package: TO-72	In Stock367 More on Order
JANTXV2N4957UB Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS PNP 30V 30MA UB Manufacturer: Microsemi Corporation Transistor Type: PNP Voltage - Collector Emitter Breakdown (Max): 30V Noise Figure (dB Typ @ f): 3.5dB @ 450MHz Gain: 25dB Power - Max: 200mW DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Current - Collector (Ic) (Max): 30mA Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB	In Stock308 More on Order
JTDB25 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ 55AW-1 Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 7.5dB Power - Max: 97W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Current - Collector (Ic) (Max): 5A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW-1 Supplier Device Package: 55AW-1	In Stock471 More on Order
JTDB75 Microsemi	Transistors - Bipolar (BJT) - RF RF TRANS NPN 55V 1.215GHZ 55AW Manufacturer: Microsemi Corporation Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 55V Frequency - Transition: 960MHz ~ 1.215GHz Gain: 7dB ~ 8.2dB Power - Max: 220W DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V Current - Collector (Ic) (Max): 8A Operating Temperature: 200°C (TJ) Mounting Type: Chassis Mount Package / Case: 55AW Supplier Device Package: 55AW	In Stock299 More on Order
KSC1393OBU ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock441 More on Order
KSC1393OTA ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock119 More on Order
KSC1393RBU ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock278 More on Order
KSC1393RTA ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock269 More on Order
KSC1393YBU ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock313 More on Order
KSC1393YTA ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 30V 700MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 700MHz Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz Gain: 20dB ~ 24dB Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 2mA, 10V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock420 More on Order
KSC1674COBU ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock454 More on Order
KSC1674COTA ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock472 More on Order
KSC1674CYBU ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock338 More on Order
KSC1674CYTA ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock213 More on Order
KSC1674OBU ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock167 More on Order
KSC1674OTA ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock246 More on Order
KSC1674RBU ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock289 More on Order
KSC1674RTA ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package: TO-92-3	In Stock222 More on Order
KSC1674YBU ON Semiconductor	Transistors - Bipolar (BJT) - RF RF TRANS NPN 20V 600MHZ TO92-3 Manufacturer: ON Semiconductor Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 20V Frequency - Transition: 600MHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz Power - Max: 250mW DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	In Stock11,970 More on Order

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