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Transistors

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MPSH17RLRAG
MPSH17RLRAG

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 800MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock455

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MPSH81
MPSH81

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ TO92

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
In Stock339

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MPSH81
MPSH81

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock403

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MPSH81
MPSH81

MICROSS/On Semiconductor

Transistors - Bipolar (BJT) - RF

DIE TRANSISTOR RF PNP

  • Manufacturer: MICROSS/On Semiconductor
  • Series: *
In Stock169

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MPSH81_D26Z
MPSH81_D26Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock125

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MPSH81_D27Z
MPSH81_D27Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock176

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MPSH81_D75Z
MPSH81_D75Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock288

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MPSH81 TRE
MPSH81 TRE

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ SOT23

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: SOT-23
In Stock155

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MRF10031
MRF10031

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 332A-03

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Gain: 9.5dB
  • Power - Max: 30W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 332A-03
  • Supplier Device Package: 332A-03, Style 2
In Stock339

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MRF10120
MRF10120

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 355C-02

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Gain: 8.5dB
  • Power - Max: 120W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 15A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 355C-02
  • Supplier Device Package: 355C-02, Style 1
In Stock280

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MRF10350
MRF10350

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 355E-01

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Gain: 9dB
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 31A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 355E-01
  • Supplier Device Package: 355E-01, Style 1
In Stock319

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MRF10502
MRF10502

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 355J-02

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Gain: 9dB
  • Power - Max: 500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 29A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 355J-02
  • Supplier Device Package: 355J-02, STYLE 1
In Stock477

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MRF1090MB
MRF1090MB

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 70V 332A-03

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Gain: 10.8dB
  • Power - Max: 90W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2.5A, 5V
  • Current - Collector (Ic) (Max): 6A
  • Mounting Type: Chassis Mount
  • Package / Case: 332A-03
  • Supplier Device Package: 332A-03, Style 1
In Stock380

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MRF314
MRF314

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 35V 211-07

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Gain: 13.5dB
  • Power - Max: 30W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1.5A, 5V
  • Current - Collector (Ic) (Max): 3.4A
  • Mounting Type: Chassis Mount
  • Package / Case: 211-07
  • Supplier Device Package: 211-07, STYLE 1
In Stock432

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MRF321
MRF321

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 33V 244-04

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 33V
  • Gain: 13dB
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 1.1A
  • Mounting Type: Chassis Mount
  • Package / Case: 244-04
  • Supplier Device Package: 244-04, STYLE 1
In Stock497

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MRF327
MRF327

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 33V 316-01

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 33V
  • Gain: 9dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V
  • Current - Collector (Ic) (Max): 9A
  • Mounting Type: Chassis Mount
  • Package / Case: 316-01
  • Supplier Device Package: 316-01, STYLE 1
In Stock378

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MRF392
MRF392

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS 2NPN EMITTR 30V 744A-01

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: 2 NPN (Dual) Common Emitter
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Gain: 10dB
  • Power - Max: 125W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
  • Current - Collector (Ic) (Max): 16A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 744A-01
  • Supplier Device Package: 744A-01, Style 1
In Stock221

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MRF393
MRF393

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS 2NPN EMITTR 30V 744A-01

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: 2 NPN (Dual) Common Emitter
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Gain: 8.5dB
  • Power - Max: 100W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 16A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 744A-01
  • Supplier Device Package: 744A-01, Style 1
In Stock373

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MRF422
MRF422

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 35V 211-11

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Gain: 13dB
  • Power - Max: 150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
In Stock485

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MRF428
MRF428

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 211-11

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Gain: 15dB
  • Power - Max: 150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
In Stock463

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MRF4427
MRF4427

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 8SO

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Gain: 20dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock462

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MRF4427G
MRF4427G

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 8SO

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Gain: 20dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock280

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MRF4427GR1
MRF4427GR1

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 8SO

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Gain: 20dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock434

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MRF4427GR2
MRF4427GR2

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 8SO

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Gain: 20dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock303

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MRF4427R1
MRF4427R1

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 8DBGA

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Gain: 20dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-dBGA (2x1.5)
In Stock321

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MRF4427R2
MRF4427R2

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 8SO

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Gain: 20dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
In Stock408

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MRF448
MRF448

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 50V 211-11

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Gain: 14dB
  • Power - Max: 250W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 10V
  • Current - Collector (Ic) (Max): 16A
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
In Stock554

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MRF454
MRF454

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 211-11

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Gain: 12dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Mounting Type: Chassis Mount
  • Package / Case: 211-11, Style 2
  • Supplier Device Package: 211-11, Style 2
In Stock279

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MRF455
MRF455

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 18V 211-07

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Gain: 13dB
  • Power - Max: 60W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 15A
  • Mounting Type: Chassis Mount
  • Package / Case: 211-07
  • Supplier Device Package: 211-07, STYLE 1
In Stock340

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MRF517
MRF517

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 4GHZ TO39

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 4GHz
  • Gain: 9dB ~ 10dB
  • Power - Max: 2.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 60mA, 10V
  • Current - Collector (Ic) (Max): 150mA
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
In Stock295

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