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Transistors

Records 64,903
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Part Number
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MMBTH81
MMBTH81

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock43,869

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MMBTH81_D87Z
MMBTH81_D87Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock114

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MMBTH81_F080
MMBTH81_F080

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS PNP 20V 600MHZ SOT23

  • Manufacturer: ON Semiconductor
  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock459

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MPA201
MPA201

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 22V 2GHZ 55AU

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 22V
  • Frequency - Transition: 2GHz
  • Gain: 13dB
  • Power - Max: 6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AU
  • Supplier Device Package: 55AU
In Stock233

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MPA201HS
MPA201HS

Microsemi

Transistors - Bipolar (BJT) - RF

TRANS RF BIPO 6W 300MA 55AU2

  • Manufacturer: Microsemi Corporation
In Stock362

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MPS3563
MPS3563

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 1.5GHZ TO92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
  • Gain: 14dB @ 200MHz
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
In Stock483

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MPS3563G
MPS3563G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 1.5GHZ TO92

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 1.5GHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 60MHz
  • Gain: 14dB @ 200MHz
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
In Stock364

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MPS5179
MPS5179

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock467

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MPS5179_D26Z
MPS5179_D26Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock195

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MPS5179_D27Z
MPS5179_D27Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock319

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MPS5179_D75Z
MPS5179_D75Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock349

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MPS5179G
MPS5179G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock179

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MPS5179RLRAG
MPS5179RLRAG

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Power - Max: 200W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock221

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MPS5179RLRPG
MPS5179RLRPG

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Power - Max: 200W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock296

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MPSH10
MPSH10

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPNUHF/VHF

  • Manufacturer: Central Semiconductor Corp
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
In Stock220

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MPSH10_D26Z
MPSH10_D26Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock195

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MPSH10_D27Z
MPSH10_D27Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock494

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MPSH10_D74Z
MPSH10_D74Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock358

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MPSH10_D75Z
MPSH10_D75Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock246

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MPSH10G
MPSH10G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock115

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MPSH10RLRA
MPSH10RLRA

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock126

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MPSH10RLRAG
MPSH10RLRAG

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock398

More on Order

MPSH10RLRPG
MPSH10RLRPG

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock221

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MPSH11
MPSH11

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock256

More on Order

MPSH11_D27Z
MPSH11_D27Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
In Stock169

More on Order

MPSH17
MPSH17

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 800MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock160

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MPSH17_D26Z
MPSH17_D26Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 800MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock374

More on Order

MPSH17_D27Z
MPSH17_D27Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 800MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock279

More on Order

MPSH17_D75Z
MPSH17_D75Z

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 800MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock249

More on Order

MPSH17G
MPSH17G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 800MHZ TO92-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): 6dB @ 200MHz
  • Gain: 24dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 5mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
In Stock341

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