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Transistors

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LPT16ED
LPT16ED

Skyworks Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 4V 16GHZ DIE

  • Manufacturer: Skyworks Solutions Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4V
  • Frequency - Transition: 16GHz
  • Gain: 5.2dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
In Stock301

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LZ1418E100R,114
LZ1418E100R,114

Ampleon

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 20V 1.6GHZ CDFM2

  • Manufacturer: Ampleon USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.6GHz
  • Power - Max: 45W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 3V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-443A
  • Supplier Device Package: CDFM2
In Stock371

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MAPR-000912-500S00
MAPR-000912-500S00

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 80V

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Gain: 9.44dB ~ 9.77dB
  • Power - Max: 500W
  • Current - Collector (Ic) (Max): 52.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
In Stock403

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MAPR-002729-170M00
MAPR-002729-170M00

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Gain: 9.11dB ~ 9.69dB
  • Power - Max: 170W
  • Current - Collector (Ic) (Max): 27A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
In Stock350

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MAPR-002731-115M00
MAPR-002731-115M00

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Gain: 8.06dB ~ 8.45dB
  • Power - Max: 115W
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
In Stock347

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MAPRST0912-350
MAPRST0912-350

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.215GHZ

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.215GHz
  • Gain: 9.4dB
  • Power - Max: 350W
  • Current - Collector (Ic) (Max): 32.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
In Stock204

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MAPRST0912-50
MAPRST0912-50

M/A-Com Technology Solutions

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V

  • Manufacturer: M/A-Com Technology Solutions
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Gain: 10.16dB ~ 10.25dB
  • Power - Max: 50W
  • Current - Collector (Ic) (Max): 5.3A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
In Stock124

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MAX2601ESA
MAX2601ESA

Maxim Integrated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ 8SOIC

  • Manufacturer: Maxim Integrated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
In Stock397

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MAX2601ESA+
MAX2601ESA+

Maxim Integrated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ 8SOIC

  • Manufacturer: Maxim Integrated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
In Stock675

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MAX2601ESA-T
MAX2601ESA-T

Maxim Integrated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ 8SOIC

  • Manufacturer: Maxim Integrated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
In Stock480

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MAX2601ESA+T
MAX2601ESA+T

Maxim Integrated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ 8SOIC

  • Manufacturer: Maxim Integrated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
In Stock261

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MAX2602ESA
MAX2602ESA

Maxim Integrated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ 8SOIC

  • Manufacturer: Maxim Integrated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
In Stock428

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MAX2602ESA+
MAX2602ESA+

Maxim Integrated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ 8SOIC

  • Manufacturer: Maxim Integrated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
In Stock559

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MAX2602ESA-T
MAX2602ESA-T

Maxim Integrated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ 8SOIC

  • Manufacturer: Maxim Integrated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
In Stock351

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MAX2602ESA+T
MAX2602ESA+T

Maxim Integrated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1GHZ 8SOIC

  • Manufacturer: Maxim Integrated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1GHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 836MHz
  • Gain: 11.6dB
  • Power - Max: 6.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 250mA, 3V
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
In Stock447

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MBC13900NT1

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 6.5V 15GHZ SOT343

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6.5V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
  • Gain: 15dB ~ 22dB
  • Power - Max: 188mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
In Stock315

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MBC13900T1

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 6.5V 15GHZ SOT343

  • Manufacturer: NXP USA Inc.
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6.5V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
  • Gain: 15dB ~ 22dB
  • Power - Max: 188mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
In Stock212

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MC1331
MC1331

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock324

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MC1331-2
MC1331-2

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock120

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MC1331-3
MC1331-3

Microsemi

Transistors - Bipolar (BJT) - RF

RF POWER TRANSISTOR

  • Manufacturer: Microsemi Corporation
In Stock145

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MCH3007-TL-H
MCH3007-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ 3MCPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Leads
  • Supplier Device Package: 3-MCPH
In Stock290

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MCH4009-TL-H
MCH4009-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.5V 25GHZ 4MCPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.1dB @ 2GHz
  • Gain: 13.5dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-MCPH
In Stock13,927

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MCH4013-TL-E
MCH4013-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.5V 22.5GHZ 4MCPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 22.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 16dB
  • Power - Max: 50mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-MCPH
In Stock330

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MCH4014-TL-H
MCH4014-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10GHZ 4MCPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 18dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-MCPH
In Stock399

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MCH4015-TL-H
MCH4015-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10GHZ 4MCPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-MCPH
In Stock4,719

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MCH4016-TL-H
MCH4016-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10GHZ 4MCPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 18dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-MCPH
In Stock437

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MCH4017-TL-H
MCH4017-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10GHZ 4MCPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-MCPH
In Stock456

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MCH4020-TL-E
MCH4020-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 8V 16GHZ 4MCPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17.5dB
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-MCPH
In Stock238

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MCH4020-TL-H
MCH4020-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 8V 16GHZ 4MCPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17.5dB @ 1GHz
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-MCPH
In Stock7,602

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MCH4021-TL-E
MCH4021-TL-E

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 8V 16GHZ 4MCPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17.5dB
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-MCPH
In Stock460

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