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Transistors

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MCH4021-TL-H
MCH4021-TL-H

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 8V 16GHZ 4MCPH

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 8V
  • Frequency - Transition: 16GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17.5dB
  • Power - Max: 400mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-MCPH
In Stock240

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MDS1100
MDS1100

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.03GHZ 55TU-1

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz
  • Gain: 8.9dB
  • Power - Max: 8750W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 100A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 55TU-1
  • Supplier Device Package: 55TU-1
In Stock479

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MDS140L
MDS140L

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 70V 1.09GHZ 55AW

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Gain: 9.5dB
  • Power - Max: 500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 12A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
In Stock312

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MDS150
MDS150

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 60V 1.09GHZ 55AW

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Gain: 10dB
  • Power - Max: 350W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
In Stock117

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MDS400
MDS400

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 55V 1.09GHZ 55KT

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Gain: 6.5dB
  • Power - Max: 1450W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 40A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55KT
  • Supplier Device Package: 55KT
In Stock465

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MDS500L
MDS500L

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 70V 1.09GHZ 55ST

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 70V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Gain: 9.2dB
  • Power - Max: 833W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 24A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST
  • Supplier Device Package: 55ST
In Stock138

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MDS60L
MDS60L

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.09GHZ 55AW

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Gain: 10dB
  • Power - Max: 120W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55AW
  • Supplier Device Package: 55AW
In Stock277

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MDS70
MDS70

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.09GHZ 55CX

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Gain: 10.3dB ~ 11.65dB
  • Power - Max: 225W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55CX
  • Supplier Device Package: 55CX
In Stock404

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MDS800
MDS800

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 65V 1.09GHZ 55ST-1

  • Manufacturer: Microsemi Corporation
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.09GHz
  • Gain: 8.6dB
  • Power - Max: 1458W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 60A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST-1
  • Supplier Device Package: 55ST-1
In Stock422

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MMBT5179
MMBT5179

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 2GHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): 5dB @ 200MHz
  • Gain: 15dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock111,754

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MMBT5770
MMBT5770

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 600MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock281

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MMBT918
MMBT918

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 600MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 15dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock479

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MMBT918LT1
MMBT918LT1

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 600MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 11dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock459

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MMBT918LT1G
MMBT918LT1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 600MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 11dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock9,198

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MMBTH10
MMBTH10

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock105

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MMBTH10-4LT1
MMBTH10-4LT1

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 800MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 800MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock449

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MMBTH10-4LT1G
MMBTH10-4LT1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 800MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 800MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock13,919

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MMBTH10-7
MMBTH10-7

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock388

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MMBTH10-7-F
MMBTH10-7-F

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock4,625

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MMBTH10LT1
MMBTH10LT1

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock257

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MMBTH10LT1G
MMBTH10LT1G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock52,416

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MMBTH10LT3G
MMBTH10LT3G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock12,410

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MMBTH10M3T5G
MMBTH10M3T5G

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT723

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 265mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SOT-723
In Stock393

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MMBTH10RG
MMBTH10RG

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 40V 450MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 450MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock190

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MMBTH10-TP
MMBTH10-TP

Micro Commercial Co

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23

  • Manufacturer: Micro Commercial Co
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
In Stock269

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MMBTH11
MMBTH11

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 25V 650MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock8,469

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MMBTH24
MMBTH24

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 30V 400MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 400MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock441

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MMBTH24-7
MMBTH24-7

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 40V 400MHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 400MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock439

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MMBTH24-7-F
MMBTH24-7-F

Diodes Incorporated

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 40V 400MHZ SOT23-3

  • Manufacturer: Diodes Incorporated
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 400MHz
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 8mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
In Stock8,869

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MMBTH34
MMBTH34

ON Semiconductor

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 40V 500MHZ SOT23-3

  • Manufacturer: ON Semiconductor
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 500MHz
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
In Stock478

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